STH315N10F7-2 datasheet(3/19 Pages) STMICROELECTRONICS

Part #	STH315N10F7-2

Description	Automotive-grade N-channel 100 V, 2.1 mΩ typ., 180 A STripFET™ F7 Power MOSFETs

PDF	19 Pages

Scroll/Zoom	100%

Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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3 / 19 page

DocID025090 Rev 4

3/19

STH315N10F7-2, STH315N10F7-6

Electrical ratings

Table 2. Absolute maximum ratings

Symbol

Parameter

Value

Unit

VDS

Drain-source voltage

100

VGS

Gate-source voltage

± 20

(1)

Current limited by package.

Drain current (continuous) at TC = 25°C

180

(1)

Drain current (continuous) at TC=100°C

120

IDM

(2)

Pulse width limited by safe operating area.

Drain current (pulsed)

720

PTOT

Total dissipation at TC = 25°C

315

Derating factor

2.1

W/°C

EAS

(3)

Starting TJ=25°C, ID=60 A, VDD=50 V

Single pulse avalanche energy

(TJ = 25 °C, L=0.55 mH, Ias= 65 A)

Tstg

Operating junction temperature

storage temperature

- 55 to 175

°C

Table 3. Thermal data

Symbol

Parameter

Value

Unit

Rthj-case

Thermal resistance junction-case

0.48

°C/W

Rthj-pcb

(1)

When mounted on 1 inch² FR-4 board, 2oz Cu

Thermal resistance junction-pcb max

°C/W

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