STH315N10F7-2 datasheet(4/19 Pages) STMICROELECTRONICS

4 / 19 page

Electrical characteristics

STH315N10F7-2, STH315N10F7-6

4/19

DocID025090 Rev 4

Electrical characteristics

(TCASE = 25 °C unless otherwise specified).

Table 4. On/off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown

voltage

VGS= 0, ID = 250 µA

100

IDSS

Zero gate voltage drain

current

VGS = 0, VDS= 100 V

µA

VGS = 0, VDS= 100 V,

TC= 125°C

100

µA

IGSS

Gate body leakage current VDS = 0, VGS = 20 V

100

VGS(th)

Gate threshold voltage

VDS= VGS, ID = 250 µA

2.5

3.5

4.5

RDS(on)

Static drain-source

on- resistance

VGS= 10 V, ID= 60 A

2.1

2.3

Table 5. Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Input capacitance

VGS = 0, VDS = 25 V,

f = 1 MHz

12800

Coss

Output capacitance

3500

Crss

Reverse transfer

capacitance

-170

Total gate charge

VDD = 50 V, ID = 180 A,

VGS = 10 V

(see Figure 14)

-180

Qgs

Gate-source charge

Qgd

Gate-drain charge

Table 6. Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

td(on)

Turn-on delay time

VDD = 50 V, ID = 90 A

RG =4.7 Ω VGS = 10 V

(see Figure 13,

Figure 18)

-62

Rise time

108

td(off)

Turn-off delay time

148

Fall time

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