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STH315N10F7-2 Datasheet(PDF) 5 Page - STMicroelectronics

Part # STH315N10F7-2
Description  Automotive-grade N-channel 100 V, 2.1 mΩ typ., 180 A STripFET™ F7 Power MOSFETs
PDF  19 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STH315N10F7-2 Datasheet(HTML) 5 Page - STMicroelectronics

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STH315N10F7-2, STH315N10F7-6
Electrical characteristics
19
Table 7. Source drain diode
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
ISD
Source-drain current
-
180
A
ISDM
(1)
1.
Pulse width limited by safe operating area.
Source-drain current
(pulsed)
-720
A
VSD
(2)
2.
Pulse duration = 300µs, duty cycle 1.5%
Forward on voltage
ISD=60 A, VGS=0
-
1.5
V
trr
Reverse recovery time
ISD=180 A,
di/dt = 100 A/µs,
VDD=80 V, Tj=150°C
(see Figure 15)
-85
ns
Qrr
Reverse recovery charge
-
200
nC
IRRM
Reverse recovery current
-
4.7
A



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