STH315N10F7-2 datasheet(1/19 Pages) STMICROELECTRONICS

Part #	STH315N10F7-2

Description	Automotive-grade N-channel 100 V, 2.1 mΩ typ., 180 A STripFET™ F7 Power MOSFETs

PDF	19 Pages

Scroll/Zoom	100%

Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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1 / 19 page

This is information on a product in full production.

September 2014

DocID025090 Rev 4

1/19

STH315N10F7-2,

STH315N10F7-6

Automotive-grade N-channel 100 V, 2.1 m

Ω typ., 180 A

STripFET™ F7 Power MOSFETs

Datasheet

- production data

Figure 1. Internal schematic diagram

Features

• Designed for automotive applications and

AEC-Q101 qualified

• Among the lowest RDS(on) on the market

• Excellent figure of merit (FoM)

• Low Crss/Ciss ratio for EMI immunity

• High avalanche ruggedness

Applications

• Switching applications

Description

These N-channel Power MOSFETs utilize

STripFET™ F7 technology with an enhanced

trench gate structure that results in very low on-

state resistance, while also reducing internal

capacitance and gate charge for faster and more

efficient switching.

1

TAB

3

2

H PAK-2

2

H PAK-6

2

1

TAB

7

Order codes

VDS

RDS(on) max.

ID

STH315N10F7-2

100 V

2.3 m

Ω

180 A

STH315N10F7-6

Table 1. Device summary

Order codes

Marking

Package

Packaging

STH315N10F7-2

315N10F7

H2PAK-2

Tape and reel

STH315N10F7-6

H2PAK-6

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