THS789

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SLOS776A – SEPTEMBER 2012 – REVISED DECEMBER 2015

6 Specifications

6.1 Absolute Maximum Ratings

over operating junction temperature range (unless otherwise noted)

MIN

MAX

UNIT

4

V

–0.3

V

Digital I/O to GND

–0.3

V

150

°C

Storage temperature

150

°C

(1)

LVDS outputs are not short-circuit-proof to GND.

(2)

The THS789 device has an automatic power shutdown at 140°C, typical.

6.2 ESD Ratings

VALUE

UNIT

±2000

Electrostatic discharge

V

Charged device model (CDM), per JEDEC specification JESD22-C101, all

±250

(1)

JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

(2)

JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

6.3 Recommended Operating Conditions

over operating junction temperature range (unless otherwise noted)

MIN

NOM

MAX

UNIT

Supply voltage

3.135

3.465

V

Junction temperature

0

105

°C

MCLOCK frequency

200

MHz

6.4 Thermal Information

THS789

PFD (HTQFP)

UNIT

100 PINS

Junction-to-ambient thermal resistance

24.2

°C/W

Junction-to-case (top) thermal resistance

10.4

°C/W

Junction-to-board thermal resistance

9.8

°C/W

Junction-to-top characterization parameter

0.3

°C/W

Junction-to-board characterization parameter

9.7

°C/W

Junction-to-case (bottom) thermal resistance

0.5

°C/W

(1)

For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application

report, SPRA953.

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