ML620Q151A datasheet(20/36 Pages) LAPIS

20 / 36 page

FEDL620Q150A-01

ML620Q151A/2A/3A/4A/5A/6A/7A/8A/9A

20/36

Flash Memory Operating Conditions

(VSS = 0V)

Parameter

Symbol

Condition

Range

Unit

Data flash memory, At write/erase

-40 to +105

Operating temperature

TOP

Flash ROM, At write/erase

0 to +40

°C

Operating voltage

VDD

At write/erase

1.8 to 5.5

CEPD

Data Flash

10,000

Maximum rewrite count

CEPP

Program Flash

100

times

―

Chip erase

All area

―

Program Flash

―

Block erase

Data Flash

Erase unit

―

Sector erase (Data Flash only)

Erase time

―

Chip erase, Block erase, Sector

erase

100

Write unit

―

1 word (2 Bytes)

―

Write time (Max.)

―

1 word (2 Bytes)

µs

Data retention period

YDR

―

years

DC Characteristics (Oscillation, Reset)

(VDD=1.8 to 5.5V, VSS =0V, Ta=−40 to +105°C, unless otherwise specified)

Parameter

Symbol

Condition

Min.

Typ.

Max.

Unit

Measur

ing

circuit

Low-speed crystal oscillation

start time*

TXTL

―

0.6

Ta= +25

°C

Typ

-1%

32.768k

Typ

+1%

Ta= -40 to 85

°C

Typ

-2.5%

32.768k

Typ

+2.5%

Low-speed RC oscillator

frequency

fLCR

Ta= -40 to 105

°C

Typ

-3%

32.768k

Typ

+3%

Ta= +25

°C

Typ

-5%

2.097

Typ

+5%

MHz

High-speed RC oscillator

ferequency

fHCR

Ta= -40

°C to +105°C

Typ

-15%

2.097

Typ

+15%

MHz

PLL oscillation frequency

fPLL

LSCLK=32.768kHz

2,048 clock average

Typ

-1%

8.192

Typ

+1%

MHz

Reset pulse width

PRST

―

100

―

Reset noise rejection pulse width

PNRST

―

0.4

µs

Power On Reset rising time

TPOR

―

1: Use 32.768KHz Crystal Oscillator DT-26 (Daishinku) with capacitance CGL/CDL＝12pF.

ML620Q151A Datasheet(PDF) 20 Page - LAPIS Semiconductor Co., Ltd.

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