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STM8AL3LE8x Datasheet(PDF) 78 Page - STMicroelectronics |
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STM8AL3LE8x Datasheet(HTML) 78 Page - STMicroelectronics |
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78 / 133 page  Electrical parameters STM8AL31E8x STM8AL3LE8x 78/133 DocID027180 Rev 5 Figure 18. Typical IDD(LPW) vs. VDD (LSI clock source), all peripherals OFF(1) 1. Typical current consumption measured with code executed from RAM. Table 24. Total current consumption in low-power wait mode at VDD = 1.65 V to 3.6 V Symbol Parameter Conditions(1) Typ. Max. Unit IDD(LPW) Supply current in low-power wait mode LSI RC osc. (at 38 kHz) all peripherals OFF TA = -40 °C to 25 °C 3.00 3.30(2) μA TA = 85 °C 4.40 9.00(3) TA = 125 °C 11.00 18.00(3) LSE external clock(4) (32.768 kHz) TA = -40 °C to 25 °C 2.35 2.70(2) TA = 85 °C 3.10 3.70(2) TA = 125 °C 12.0 14.0(2) 1. No floating I/Os. 2. Guaranteed by characterization results. 3. Tested at 85°C for temperature range A or 125°C for temperature range C. 4. Oscillator bypassed (LSEBYP = 1 in CLK_ECKCR). When configured for external crystal, the LSE consumption (IDD LSE) must be added. Refer to Table 33. |
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