ZSC31010CEC datasheet(6/43 Pages) IDT

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ZSC31010 Datasheet

January 20, 2016

Electrical Characteristics

1.1.

Absolute Maximum Ratings

Note: The absolute maximum ratings are stress ratings only. The device might not function or be operable above

the operating conditions given in section 1.2. Stresses exceeding the absolute maximum ratings might also

damage the device. In addition, extended exposure to stresses above the recommended operating conditions

might affect device reliability. IDT does not recommend designing to the “Absolute Maximum Ratings.”

Parameter

Symbol

Conditions

Min

Max

Unit

Analog Supply Voltage

VDD

-0.3

6.0

Voltages at Analog I/O – In Pin

VINA

-0.3

VDD+0.3

Voltages at Analog I/O – Out Pin

VOUTA

-0.3

VDD+0.3

Storage Temperature Range

TSTG

-50

150

°C

Storage Temperature Range

TSTG <10h

For periods < 10 hours

-50

170

°C

Note: Also see Table 6.1 regarding soldering temperature and storage conditions for the SOP-8 package.

1.2.

Recommended Operating Conditions

Parameter

Symbol

Conditions

Min

Typ

Max

Unit

Analog Supply Voltage to Ground

VDD

2.7

5.0

5.5

Analog Supply Voltage (with external

JFET Regulator)

VSUPP

5.5

Common Mode Voltage

VCM

VDDA - 1.3

Ambient Temperature Range

1, 2)

TAMB

-50

150

°C

External Capacitance between VDD and

Ground

CVDD

100

220

470

Output Load Resistance to VDD

RL,OUT

2.5

Ω

Output Load Resistance to VSS

3) 4)

RL,OUT

2.5

Ω

Output Load Capacitance

CL,OUT

Bridge Resistance

RBR

0.2

100

Ω

Power ON Rise Time

tPON

100

1) Note that the maximum EEPROM programming temperature is 85°C.

2) If buying die, designers should use caution not to exceed maximum junction temperature by proper package selection.

3) When using the output for digital calibration, no pull down resistor is allowed.

4) For loads less than 20 k

Ω to VSS an equivalent strength (or lower) pull-up resistor must be added.

5) Using the output for digital calibration, C

L,OUT is limited by the maximum rise time TZAC,rise.

6) Note: Minimum bridge resistance is only a factor if using the Bsink feature. The nominal R

DS(ON) of the Bsink transistor is 10

Ω when

operating at VDD = 5 V, and 15

Ω when operating at V

DD = 3.0 V. This does give rise to a ratiometricity inaccuracy that becomes greater

with low bridge resistances.

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