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LNBH25 Datasheet(PDF) 14 Page - STMicroelectronics |
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LNBH25 Datasheet(HTML) 14 Page - STMicroelectronics |
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14 / 34 page ![]() Typical application circuits LNBH25 14/34 Doc ID 022433 Rev 4 5 Typical application circuits Figure 6. DiSEqC 1.x application circuit Table 5. DiSEqC 1.X bill of material Component Notes R1 (RSEL) SMD resistor. Refer to Table 13 and ISEL pin description in Table 2 C1, C2 > 25 V electrolytic capacitor, 100 µF is suitable. C3 From 470 nF to 2.2 µF ceramic capacitor. Higher values allow lower DC-DC noise. C5 From 100 nF to 220 nF ceramic capacitor. Higher values allow lower DC-DC noise. C4, C7 220 nF ceramic capacitors. D1 STPS130A or similar schottky diode. D3 BAT54, BAT43, 1N5818, or any low power schottky diode with IF (AV) > 0.2 A, VRRM > 25 V, VF < 0.5 V. To be placed as close as possible to VOUT pin. D2 1N4001-07, S1A-S1M, or any similar general purpose rectifier. L1 10 µH inductor with Isat > Ipeak where Ipeak is the boost converter peak current. L1 C3 Vin 12V to LNB LX Vup Vout ADDR C4 LNBH25 { I2C Bus SDA SCL P-GND A -GND D1 C5 ISEL R1 (RSEL) Byp C7 DSQIN C2 C1 Vcc D2 FLT DiSEqC Envelope TTL or DiSEqC 22KHz TTL D3 21 3 17 16 9 8 7 4 15 6 2 22 20 AM10431v1 |
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