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OPA838IDBVT Datasheet(PDF) 7 Page - Texas Instruments |
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OPA838IDBVT Datasheet(HTML) 7 Page - Texas Instruments |
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7 / 41 page ![]() 7 OPA838 www.ti.com SBOS867 – AUGUST 2017 Product Folder Links: OPA838 Submit Documentation Feedback Copyright © 2017, Texas Instruments Incorporated (1) Test levels (all values set by characterization and simulation): (A) 100% tested at 25°C, overtemperature limits by characterization and simulation; (B) Not tested in production, limits set by characterization and simulation; (C) Typical value only for information. (2) This slew rate is the average of the rising and falling time estimated from the large-signal bandwidth as: (0.8 × VPEAK / √2) × 2π × f–3dB where this f–3dB is the typical measured 2-VPP bandwidth at gains of 6 V/V. (3) Input offset voltage drift, input bias current drift, and input offset current drift are average values calculated by taking data at the end points, computing the difference, and dividing by the temperature range. (4) Input offset voltage drift, input bias current drift, and input offset current drift typical specifications are mean ± 1σ characterized by the full temperature range end-point data. Maximum drift specifications are set by the min, max packaged test range on the wafer-level screened drift. Drift is not specified by the final automated test equipment (ATE) or by QA sample testing. (5) Current is considered positive out of the pin. 7.6 Electrical Characteristics: VS = 3 V at VS+ = 3 V, VS– = 0 V, RF = 1 kΩ, RG = 200 Ω, RL = 2 kΩ, G = 6 V/V, input and output referenced to midsupply, and TA ≈ 25°C, (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT TEST LEVEL(1) AC PERFORMANCE SSBW Small-signal bandwidth VOUT = 20 mVPP, G = 6 (peaking < 4 dB) 70 86 MHz C VOUT = 20 mVPP, G = 10, RF = 1.6 kΩ 50 C VOUT = 20 mVPP, G = 100, RF = 16.9 kΩ 3 C GBP Gain-bandwidth product VOUT = 20 mVPP, G = 100 240 300 MHz C LSBW Large-signal bandwidth VOUT = 2 VPP, G = 6 45 MHz C Bandwidth for 0.1-dB flatness VOUT = 2 VPP, G = 6 5 MHz C SR Slew rate From LSBW(2) 250 350 V/µs C Overshoot, undershoot VOUT = 1-V step, G = 6, input tR = 6 ns 2% 4% C tR, tF Rise, fall time VOUT = 1-V step, G = 6, input tR = 6 ns 6.3 7 ns C Settling time to 0.1% VOUT = 1-V step, G = 6, input tR = 6 ns 30 ns C Settling time to 0.01% VOUT = 1-V step, G = 6, input tR = 6 ns 40 ns C HD2 Second-order harmonic distortion f = 100 kHz, VO = 2 VPP, G = 6 (see Figure 74) –108 dBc C HD3 Third-order harmonic distortion f = 100 kHz, VO = 2 VPP, G = 6 (see Figure 74) –125 dBc C Input voltage noise f > 1 kHz 1.8 nV/ √Hz C Voltage noise 1/f corner frequency 100 Hz C Input current noise f > 100 kHz 1.0 pA/ √Hz C Current noise 1/f corner frequency 7 kHz C Overdrive recovery time G = 6, 2x output overdrive, DC-coupled 50 ns C Closed-loop output impedance f = 1 MHz, G = 6 0.3 Ω C DC PERFORMANCE AOL Open-loop voltage gain VO = ±1 V, RL = 2 kΩ 110 125 dB A Input-referred offset voltage TA ≈ 25°C –125 ±15 125 µV A TA = 0°C to 70°C –165 ±15 200 B TA = –40°C to 85°C –230 ±15 220 B TA = –40°C to 125°C –230 ±15 285 B Input offset voltage drift(3) TA = –40°C to 125°C (4) –1.6 ±0.4 1.6 µV/°C B Input bias current(5) TA ≈ 25°C .7 1.5 2.8 µA A TA = 0°C to 70°C .2 1.5 3.5 B TA = –40°C to 85°C .2 1.5 3.7 B TA = –40°C to 125°C .2 1.5 4.4 B Input bias current drift(3) TA = –40°C to 125°C 4.5 7.8 17 nA/°C B Input offset current TA ≈ 25°C –70 ±20 70 nA A TA = 0°C to 70°C –83 ±20 93 B TA = –40°C to 85°C –105 ±20 100 B TA = –40°C to 125°C –105 ±13 120 B Input offset current drift(3) TA = –40°C to 125°C –500 ±20 500 pA/°C B |
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