QPD1025L

1500 W, 65 V, 1.0

– 1.1 GHz, GaN RF Input-Matched Transistor

Datasheet Rev. B

│ Subject to change without notice

- 3 of 18 -

www.qorvo.com

RF Characterization

Parameter

Min

Typ

Max

Units

–

21.2

–

 dB

Output Power at 3dB compression point, P3dB

–

1461

–

W

Drain Efficiency at 3dB compression point,

DEFF3dB

–

73.2

–

%

Gain at 3dB compression point, G3dB

–

18.2

–

dB

Notes:

1.

RF Characterization

Symbol Parameter

dB Compression

Typical

VSWR

Impedance Mismatch Ruggedness

3

 10:1

Notes

:

1.

2.

Input drive power is determined at pulsed 3dB compression under matched condition at EVB output connector

3.

Pulse: 100us, 10% Duty cycle