QPD1025LS2 datasheet(4/18 Pages) TRIQUINT

Part #	QPD1025LS2

Description	1500 W, 65 V, 1.0 ??1.1 GHz, GaN RF Input-Matched Transistor

PDF	18 Pages

Scroll/Zoom	100%

Manufacturer	TRIQUINT [TriQuint Semiconductor]

Direct Link	http://www.triquint.com

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4 / 18 page

QPD1025L

1500 W, 65 V, 1.0

– 1.1 GHz, GaN RF Input-Matched Transistor

Datasheet Rev. B

│ Subject to change without notice

- 4 of 18 -

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Measured Load-Pull Smith Charts 1, 2, 3

Notes:

Test Conditions: VD = 65 V, IDQ = 750 mA, 100 us Pulse Width, 10% Duty Cycle, Temp = 25°C.

The performance shown below is for only half of the device out of the two independent amplification paths.

See page 13 for load pull reference planes where the performance was measured.

1.0GHz, Load-pull

59.1

58.9

58.7

58.5

58.3

58.1

57.9

57.7

19.9

19.4

69.4

71.4

73.4

75.4

77.4

• Max Power is 59.2dBm

at Z = 2.31+0.392i

 = -0.1238+0.0829i

• Max Gain is 20.3dB

at Z = 1.718+2.043i

 = -0.0709+0.4636i

• Max PAE is 78.5%

at Z = 2.863+2.045i

 = 0.0876+0.3182i

Zo = 3

3dB Compression Referenced to Peak Gain

Zs(fo) = 0.72-1.76i

Zs(2fo) = 0.47+0.06i

Zs(3fo) = 0.81+0.5i

Zl(2fo) = 0.79+0.69i

Zl(3fo) = NaN

Power

Gain

PAE

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