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QPD1025LS2 Datasheet(PDF) 6 Page - TriQuint Semiconductor

Part # QPD1025LS2
Description  1500 W, 65 V, 1.0 ??1.1 GHz, GaN RF Input-Matched Transistor
PDF  18 Pages
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Manufacturer  TRIQUINT [TriQuint Semiconductor]
Direct Link  http://www.triquint.com
Logo TRIQUINT - TriQuint Semiconductor

QPD1025LS2 Datasheet(HTML) 6 Page - TriQuint Semiconductor

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QPD1025L
1500 W, 65 V, 1.0
– 1.1 GHz, GaN RF Input-Matched Transistor
Datasheet Rev. B
│ Subject to change without notice
- 6 of 18 -
www.qorvo.com
Typical Measured Performance
– Load-Pull Drive-up 1, 2
Notes:
1.
Test Conditions: VD = 65 V, IDQ = 750 mA, 100 us Pulse Width, 10% Duty Cycle, Temp = 25°C.
2.
The performance shown below is for only half of the device out of the two independent amplification paths.
3.
See page 13 for load pull reference planes where the performance was measured.
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Output Power [dBm]
Gain and PAE vs. Output Power
1.0 GHz - Power Tuned
Zs-fo = 0.72-1.76i
Zs-2fo = 0.47+0.06i
Zs-3fo = 0.81+0.5i
Zl-fo = 2.31+0.392i
Zl-2fo = 0.79+0.69i
Zl-3fo = NaN
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Gain
PAE
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Output Power [dBm]
Gain and PAE vs. Output Power
1.0 GHz - Efficiency Tuned
Zs-fo = 0.72-1.76i
Zs-2fo = 0.47+0.06i
Zs-3fo = 0.81+0.5i
Zl-fo = 2.863+2.045i
Zl-2fo = 0.79+0.69i
Zl-3fo = NaN
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Gain
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Output Power [dBm]
Gain and PAE vs. Output Power
1.1 GHz - Power Tuned
Zs-fo = 0.94-2.29i
Zs-2fo = 0.47-0.06i
Zs-3fo = 0.52+0.8i
Zl-fo = 2.53+0.746i
Zl-2fo = 0.8+0.69i
Zl-3fo = NaN
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Output Power [dBm]
Gain and PAE vs. Output Power
1.1 GHz - Efficiency Tuned
Zs-fo = 0.94-2.29i
Zs-2fo = 0.47-0.06i
Zs-3fo = 0.52+0.8i
Zl-fo = 2.221+1.322i
Zl-2fo = 0.8+0.69i
Zl-3fo = NaN
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PAE



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