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S29CL032J Datasheet(PDF) 2 Page - Cypress Semiconductor |
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S29CL032J Datasheet(HTML) 2 Page - Cypress Semiconductor |
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2 / 74 page ![]() Document Number: 002-00948 Rev. *C Page 2 of 74 S29CD032J S29CD016J S29CL032J S29CL016J Performance Characteristics Notice for the 32Mb S29CD-J and S29CL-J devices only: Refer to the application note “Recommended Mode of Operation for Cypress® 110 nm S29CD032J/S29CL032J Flash Memory” publication number S29CD-CL032J_Recommend_AN for programming best practices. Read Access Times Speed Option (MHz) 75 (32 Mb only) 66 56 40 Max Asynch. Access Time, ns (tACC)54 54 54 54 Max Synch. Burst Access, ns (tBACC)8 8 8 8 Min Initial Clock Delay (clock cycles) 5 5 5 4 Max CE# Access Time, ns (tCE)54 54 54 54 Max OE# Access time, ns (tOE)20 20 20 20 Current Consumption (Max values) Continuous Burst Read @ 75 MHz 90 mA Program 50 mA Erase 50 mA Standby Mode 60 µA Typical Program and Erase Times Double Word Programming 18 µs Sector Erase 1.0 s |
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