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NT5CB128M8GP-EKB Datasheet(PDF) 126 Page - Nanya Technology Corporation. |
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NT5CB128M8GP-EKB Datasheet(HTML) 126 Page - Nanya Technology Corporation. |
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126 / 160 page ![]() Version 2.2 126 Nanya Technology Cooperation © 04/2019 All Rights Reserved. NTC Proprietary Level: Property DDR3(L) 1Gb SDRAM NT5CB(C)128M8GN / NT5CB(C)64M16GP Bank Activity: all banks open; Output Buffer and RTT: Enabled in Mode Registers(2); ODT Signal: stable at 0; IDD3P Active Power-Down Current CKE: Low; External clock: On; tCK, CL: see the table of Timings used for IDD and IDDQ; BL: 8(1); AL: 0; : stable at 1; Command, Address, Bank Address Inputs: stable at 0; Data IO: MID-LEVEL; DM:stable at 0; Bank Activity: all banks open; Output Buffer and RTT: Enabled in Mode Registers(2); ODT Signal: stable at 0 IDD4R Operating Burst Read Current CKE: High; External clock: On; tCK, CL: see the table of Timings used for IDD and IDDQ; BL: 8(1,7); AL: 0; : High between RD; Command, Address, Bank Address Inputs: partially toggling; Data IO: seamless read data burst with different data between one burst and the next one; DM:stable at 0; Bank Activity: all banks open, RD commands cycling through banks: 0,0,1,1,2,2,...; Output Buffer and RTT: Enabled in Mode Registers(2); ODT Signal: stable at 0; IDD4W Operating Burst Write Current CKE: High; External clock: On; tCK, CL: see the table of Timings used for IDD and IDDQ; BL: 8(1); AL: 0; : High between WR; Command, Address, Bank Address Inputs: partially toggling; Data IO: seamless write data burst with different data between one burst and the next one ; DM: stable at 0; Bank Activity: all banks open, WR commands cycling through banks: 0,0,1,1,2,2,...; Output Buffer and RTT: Enabled in Mode Registers(2); ODT Signal: stable at HIGH; |
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