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NT5CB128M8GP-EKB Datasheet(PDF) 138 Page - Nanya Technology Corporation. |
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NT5CB128M8GP-EKB Datasheet(HTML) 138 Page - Nanya Technology Corporation. |
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138 / 160 page ![]() Version 2.2 138 Nanya Technology Cooperation © 04/2019 All Rights Reserved. NTC Proprietary Level: Property DDR3(L) 1Gb SDRAM NT5CB(C)128M8GN / NT5CB(C)64M16GP Fundamental AC Specifications Notes NOTE 1. The CL setting and CWL setting result in tCK(AVG).MIN and tCK(AVG).MAX requirements. When making a selection of tCK(AVG), both need to be fulfilled: Requirements from CL setting as well as requirements from CWL setting. NOTE 2. tCK(AVG).MIN limits: Since CAS Latency is not purely analog - data and strobe output are synchronized by the DLL - all possible intermediate frequencies may not be guaranteed. An application should use the next smaller JEDEC standard tCK(AVG) value (3.0, 2.5, 1.875, 1.5, 1.25, 1.07, or 0.938 ns) when calculating CL [nCK] = tAA [ns] / tCK(AVG) [ns], rounding up to the next ‘Supported CL’, where tCK(AVG) = 3.0 ns should only be used for CL = 5 calculation. NOTE 3. tCK(AVG).MAX limits: Calculate tCK(AVG) = tAA.MAX / CL SELECTED and round the resulting tCK(AVG) down to the next valid speed bin (i.e. 3.3ns or 2.5ns or 1.875 ns or 1.5 ns or 1.25 ns or 1.07 ns or 0.938 ns). This result is tCK(AVG).MAX corresponding to CL SELECTED. NOTE 4. ‘Reserved’ settings are not allowed. User must program a different value. NOTE 5. ‘Optional’ settings allow certain devices in the industry to support this setting, however, it is not a mandatory feature. Refer to supplier’s data sheet and/or the DIMM SPD information if and how this setting is supported. NOTE 6. Any DDR3-1066 speed bin also supports functional operation at lower frequencies as shown in the table which are not subject to Production Tests but verified by Design/Characterization. NOTE 7. Any DDR3-1333 speed bin also supports functional operation at lower frequencies as shown in the table which are not subject to Production Tests but verified by Design/Characterization. NOTE 8. Any DDR3-1600 speed bin also supports functional operation at lower frequencies as shown in the table which are not subject to Production Tests but verified by Design/Characterization. NOTE 9. Any DDR3-1866 speed bin also supports functional operation at lower frequencies as shown in the table which are not subject to Production Tests but verified by Design/Characterization. NOTE 10.Any DDR3-2133 speed bin also supports functional operation at lower frequencies as shown in the table which are not subject to Production Tests but verified by Design/Characterization. NOTE 11.For devices supporting optional down binning to CL=7 and CL=9, tAA/tRCD/tRPmin must be 13.125 ns. SPD settings must be programmed to match. For example, DDR3-1333(9-9-9) devices supporting down binning to DDR3-1066(7-7-7) should program 13.125 ns in SPD bytes for tAAmin (Byte 16), tRCDmin (Byte 18), and tRPmin (Byte 20). DDR3-1600(11-11-11) devices supporting down binning to DDR3-1333(9-9-9) or DDR3-1066(7-7-7) should program 13.125 ns in SPD bytes for tAAmin (Byte16), tRCDmin (Byte 18), and tRPmin (Byte 20). Once tRP (Byte 20) is programmed to 13.125ns, tRCmin (Byte 21,23) also should be programmed accodingly. For example, 49.125ns (tRASmin + tRPmin = 36 ns + 13.125 ns) for DDR3-1333(9-9-9) and 48.125ns (tRASmin + tRPmin = 35 ns + 13.125 ns) for DDR3-1600(11-11-11). NOTE 12.DDR3 800 AC timing apply if DRAM operates at lower than 800 MT/s data rate. NOTE 13.For CL5 support, refer to DIMM SPD information. DRAM is required to support CL5. CL5 is not mandatory in SPD coding. NOTE 14.For devices supporting optional down binning to CL=11, CL=9 and CL=7, tAA/tRCD/tRPmin must be 13.125ns. SPD setting must be programed to match. For example, DDR3-1866(13-13-13) devices supporting down binning to DDR3-1600(11-11-11) or DDR3-1333(9-9-9) or 1066(7-7-7) should program 13.125ns in SPD bytes for tAAmin(byte16), tRCDmin(Byte18) and tRPmin (byte20). Once tRP (Byte 20) is programmed to 13.125ns, tRCmin (Byte 21,23) also should be programmed accordingly. For example, 47.125ns (tRASmin + tRPmin = 34 ns+ 13.125 ns) |
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