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NT5CB128M8GP-EKB Datasheet(PDF) 140 Page - Nanya Technology Corporation.

Part # NT5CB128M8GP-EKB
Description  Commercial, Industrial and AutomotiveDDR3(L) 1 Gb SDRAM
PDF  160 Pages
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Manufacturer  NANYA [Nanya Technology Corporation.]
Direct Link  http://www.nanya.com
Logo NANYA - Nanya Technology Corporation.

NT5CB128M8GP-EKB Datasheet(HTML) 140 Page - Nanya Technology Corporation.

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Version 2.2
140
Nanya Technology Cooperation ©
04/2019
All Rights Reserved.
NTC Proprietary
Level: Property
DDR3(L) 1Gb SDRAM
NT5CB(C)128M8GN / NT5CB(C)64M16GP
Parameter
Symbol
DDR3-800
DDR3(L)-1066
DDR3(L)-1333
Unit
Min.
Max.
Min.
Max.
Min.
Max.
Command and Address Timing
DLL locking time
tDLLK
512
-
512
-
512
-
nCK
Internal READ Command to
PRECHARGE Command delay
tRTP
tRTPmin.: max(4tCK, 7.5ns)
tRTPmax.: -
Delay from start of internal write
transaction to internal read command
tWTR
tWTRmin.: max(4tCK, 7.5ns)
tWTRmax.: -
WRITE recovery time
tWR
15
-
15
-
15
-
ns
Mode Register Set command cycle time
tMRD
4
-
4
-
4
-
nCK
Mode Register Set command update delay
tMOD
tMODmin.: max(12tCK, 15ns)
tMODmax.:
ACT to internal read or write delay time
tRCD
Refer to
“FundamentalAC Specifications”
PRE command period
tRP
ACT to ACT or REF command period
tRC
ACTIVE to PRECHARGE command period
tRAS
A to A command delay
tCCD
4
-
4
-
4
-
nCK
Auto precharge write recovery + precharge
time
tDAL(MIN)
WR + roundup(tRP / tCK(avg))
nCK
Multi-Purpose Register Recovery Time
tMPRR
1
-
1
-
1
-
nCK
ACTIVE to ACTIVE command period (1KB
page size)
tRRD
max(4tCK
,10ns)
-
max(4tCK
,7.5ns)
-
max(4tCK
,6ns)
-
ACTIVE to ACTIVE command period (2KB
page size)
tRRD
max(4tCK
,10ns)
-
max(4tCK
,10ns)
-
max(4tCK
,7.5ns)
-
Four activate window (1KB page size)
tFAW
40
-
37.5
-
30
-
ns
Four activate window (2KB page size)
tFAW
50
-
50
-
45
-
ns
Command and Address setup time to CK,
 referenced to Vih(ac) / Vil(ac) levels
tIS(BASE)
DDR3-AC175
200
-
125
-
65
-
ps
tIS(BASE)
DDR3-AC150
350
-
275
-
190
-
ps
tIS(BASE)
DDR3L-AC160
215
-
140
-
80
-
ps
tIS(BASE)
DDR3L-AC135
365
-
290
-
205
-
ps
Command and Address hold time from CK,
 referenced to Vih(dc) / Vil(dc) levels
tIH(BASE)
DDR3-DC100
275
-
200
-
140
-
ps
tIH(BASE)
DDR3L-DC90
285
-
210
-
150
-
ps
Control and Address Input pulse width for
each input
tIPW
900
-
780
-
620
-
ps
Calibration Timing
Power-up and RESET calibration time
tZQINIT
tZQINITmin: max(512tCK, 640ns)
tZQINITmax: -
Normal operation Full calibration time
tZQOPER
tZQOPERmin: max(256tCK, 320ns)
tZQOPERmax: -
Normal operation Short calibration time
tZQCS
tZQCSmin: max(64 tCK, 80ns)
tZQCSmax: -
Reset Timing
Exit Reset from CKE HIGH to a valid
command
tXPR
tXPRmin.: max(5 tCK, tRFC(min) + 10ns)
tXPRmax.: -
Self Refresh Timings
Exit Self Refresh to commands not requiring
a locked DLL
tXS
tXSmin.: max(5 tCK, tRFC (min) + 10ns)
tXSmax.: -
Exit Self Refresh to commands requiring a
locked DLL
tXSDLL
tXSDLLmin.: tDLLK(min)
tXSDLLmax.: -
nCK
Minimum CKE low width for Self Refresh
entry to exit timing
tCKESR
tCKESRmin.: tCKE(min) + 1 tCK
tCKESRmax.: -
Valid Clock Requirement after Self Refresh
Entry (SRE) or Power-Down Entry (PDE)
tCKSRE
tCKSREmin.: max(5 tCK, 10 ns)
tCKSREmax.: -
Valid Clock Requirement before Self
Refresh Exit (SRX) or Power-Down Exit
(PDX) or Reset Exit
tCKSRX
tCKSRXmin.: max(5 tCK, 10 ns)
tCKSRXmax.: -



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