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STM32WB55CCU6TR Datasheet(PDF) 89 Page - STMicroelectronics |
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STM32WB55CCU6TR Datasheet(HTML) 89 Page - STMicroelectronics |
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89 / 193 page  DS11929 Rev 10 89/193 STM32WB55xx STM32WB35xx Electrical characteristics 169 Rgfsk On Air data rate -- 1 2 Mbps PLLres RF channel spacing -- 2 - MHz Table 25. RF transmitter BLE characteristics (continued) Symbol Parameter Test conditions Min Typ Max Unit Table 26. RF transmitter BLE characteristics (1 Mbps)(1) Symbol Parameter Test conditions Min Typ Max Unit Prf Maximum output power SMPS Bypass or ON (VFBSMPS = 1.7 V and VDD > 1.95 V)(2) -6.0 - dBm SMPS Bypass (VDD > 1.71 V) or ON (VFBSMPS = 1.4 V and VDD > 1.95 V), Code 29(2) -3.7 - 0 dBm output power -- 0 - Minimum output power -- -20 - Pband Output power variation over the band Tx = 0 dBm - Typical -0.5 - 0.4 dB BW6dB 6 dB signal bandwidth Tx = maximum output power - 670 - kHz IBSE In band spurious emission 2 MHz Bluetooth® Low Energy: -20 dBm - -50 - dBm ≥ 3 MHz Bluetooth® Low Energy: -30 dBm - -53 - fd Frequency drift Bluetooth® Low Energy: ±50 kHz -50 - +50 kHz maxdr Maximum drift rate Bluetooth® Low Energy: ±20 kHz / 50 µs -20 - +20 kHz/ 50 µs fo Frequency offset Bluetooth® Low Energy: ±150 kHz -150 - +150 kHz ∆f1 Frequency deviation average Bluetooth® Low Energy: between 225 and 275 kHz 225 - 275 ∆fa Frequency deviation ∆f2 (average) / ∆f1 (average) Bluetooth® Low Energy:> 0.80 0.80 - - - OBSE(3) Out of band spurious emission < 1 GHz - - -61 - dBm ≥ 1 GHz - - -46 - 1. Measured in conducted mode, based on reference design (see AN5165), using output power specific external RF filter and impedance matching networks to interface with a 50 Ω antenna. 2. VFBSMPS and VDD must be set to different voltage levels, depending upon the desired TX signal (see AN5246 Usage of SMPS on STM32WB Series microcontrollers, available on www.st.com). 3. Suitable for systems targeting compliance with worldwide radio-frequency regulations ETSI EN 300 328 and EN 300 440 Class 2 (Europe), FCC CFR47 Part 15 (US), and ARIB STD-T66 (Japan). |
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