ACE25QC200GLTMTH datasheet(36/64 Pages) ACE

36 / 64 page

ACE25QC200GL

2M BIT SPI NOR FLASH

VER 1.1

Dual Page Program (A2h)

The Dual Page Program instruction allows up to 256 bytes of data to be programmed at previously erased

(FFh) memory locations using two pins: SI, SO. The Dual Page Program can improve performance for

PROM Programmer and applications that have slow clock speeds <5MHz. Systems with faster clock speed

will not realize much benefit for the Dual Page Program instruction since the inherent page program time is

much longer than the time it take to clock-in the data.

A Write Enable instruction must be executed before the device will accept the Dual Page Program

instruction (Status Register-1, WEL=1). The instruction is initiated by driving the /CS pin low then shifting

the instruction code “A2h” followed by a 24-bit address (A23-A0) and at least one data byte, into the IO pins.

The /CS pin must be held low for the entire length of the instruction while data is being sent to the device.

All other functions of Dual input Page Program are identical to standard Page Program. The Dual Page

Program instruction sequence is shown in Figure26.

Figure26. Dual Page Program Instruction

ACE25QC200GLTMTH Datasheet(PDF) 36 Page - ACE Technology Co., LTD.