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MMPF0200Z Datasheet(PDF) 52 Page - NXP Semiconductors |
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MMPF0200Z Datasheet(HTML) 52 Page - NXP Semiconductors |
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52 / 118 page ![]() Analog Integrated Circuit Device Data 52 Freescale Semiconductor PF0200Z Functional Block Requirements and Behaviors Power Generation Figure 14. SW2 Efficiency Waveforms SWITCH MODE SUPPLY SW2 (CONTINUED) Transient Load Regulation • Transient load = 0.0 mA to 1.0 A, di/dt = 100 mA/ s Overshoot Undershoot VSW2LOTR – – – – 50 50 mV Quiescent Current PFM Mode APS Mode (Low output voltage settings) APS Mode (High output voltage settings) ISW2Q – – – 23 145 305 – – – µA SW2 P-MOSFET RDSON at VIN = VINSW2 = 3.3 V RONSW2P – 190 209 m SW2 N-MOSFET RDSON at VIN = VINSW2 = 3.3 V RONSW2N – 212 255 m SW2 P-MOSFET Leakage Current VIN = VINSW2 = 4.5 V ISW2PQ –– 12 µA SW2 N-MOSFET Leakage Current VIN = VINSW2 = 4.5 V ISW2NQ –– 4.0 µA Discharge Resistance RSW2DIS – 600 – Notes 41. When output is set to > 2.6 V the output will follow the input down when VIN gets near 2.8 V. 42. The higher output voltages available depend on the voltage drop in the conduction path as given by the following equation: (VINSW2 - VSW2) = ISW2* (DCR of Inductor +RONSW2P + PCB trace resistance). Table 56. SW2 Electrical Characteristics (continued) All parameters are specified at TA = -40 to 85 °C, VIN = VINSW2 = 3.6 V, VSW2 = 3.15 V, ISW2 = 100 mA, SW2_PWRSTG[2:0] = [111], typical external component values, fSW2 = 2.0 MHz, unless otherwise noted. Typical values are characterized at VIN = VINSW2 = 3.6 V, VSW2 = 3.15 V, ISW2 = 100 mA, SW2_PWRSTG[2:0] = [111], and 25 °C, unless otherwise noted. Parameter Symbol Min Typ Max Unit 0 10 20 30 40 50 60 70 80 90 100 0.1 1 10 100 1000 Ef fi ci e n cy (% ) Load Current (mA) PFM ‐ Vout = 3.15V APS ‐ Vout = 3.15V PWM ‐ Vout = 3.15V |
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