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STM32U535NET6QTR Datasheet(PDF) 156 Page - STMicroelectronics

Part # STM32U535NET6QTR
Description  Ultra-low-power Arm® Cortex®-M33 MCUTrustZone®FPU,240 DMIPS, up to 512 KB flash memory, 274 KB SRAM
PDF  278 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STM32U535NET6QTR Datasheet(HTML) 156 Page - STMicroelectronics

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Table 55. SRAM static power consumption in Stop 2 when supplied by LDO
Symbol
Parameter
Typ
Max(1)
Unit
25°C
55°C
85°C 105°C 125°C 25°C
55°C
85°C 105°C 125°C
IDD(SRAM1_64kB)(2)
SRAM1 64-Kbyte page x static consumption
(SRAM1PDSx = 1 versus SRAM1PDSx = 0)
0.9
2.1
6.3
12.6
28.5
2.8
6.3
19.0
38.0
86.0
µA
IDD(SRAM2_8KB)(3)
SRAM2 8-Kbyte page 1 static consumption
(SRAM2PDS1 = 1 versus SRAM2PDS1 = 0)
0.20.5
1.5
3.2
6.60.7
1.54.5
9.7
20.0
IDD(SRAM2_56KB)(3)
SRAM2 56-Kbyte page 2 static consumption
(SRAM2PDS2 = 1 versus SRAM2PDS2 = 0)
1.1
2.8
8.4
17.3
37.8
3.3
8.4
26.0
52.0
120.0
IDD(SRAM4)
SRAM4 static consumption
(SRAM4PDS = 1 versus SRAM4PDS = 0)
0.30.6
2.0
4.1
8.40.9
1.86.0
13.0
26.0
IDD(ICRAM)
ICACHE SRAM static consumption
(ICRAMPDS = 1 versus ICRAMPDS = 0)
0.20.4
1.3
2.7
5.60.5
1.23.9
8.2
17.0
IDD(DC1RAM)
DCACHE1 SRAM static consumption
(DC1RAMPDS = 1 versus DC1RAMPDS = 0)
0.10.2
0.8
1.6
3.00.3
0.62.4
4.99.2
IDD(PRAM)
FMAC, FDCAN and USB SRAM static consumption
(PRAMPDS = 1 versus PRAMPDS = 0)
0.10.1
0.5
0.9
1.70.3
0.31.5
2.75.1
1. Evaluated by characterization. Not tested in production.
2. SRAM1 total consumption is 3 × IDD(SRAM1_64KB).
3. SRAM2 total consumption is IDD(SRAM2_8KB) + IDD(SRAM2_56KB).
Table 56. Current consumption during wake-up from Stop 2 mode on LDO
Symbol
Parameter
Conditions
Typ
Unit
-VDD (V)
25°C
QDD(wakeup from Stop 2)
Electrical charge consumed during wake-up from
Stop 2 mode
Wake-up clock is MSI 24 MHz
3.0
0.81
nAs
Wake-up clock is HSI 16 MHz
0.79
Wake-up clock is MSI 1 MHz
1.98



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