STM32U535NET6QTR datasheet(194/278 Pages) STMICROELECTRONICS

194 / 278 page

Electrical characteristics

STM32U535xx

194/278

DS14217 Rev 1

Figure 33. HSI48 frequency versus temperature

TRIM(1)

User trimming step

0.12

0.18

USER TRIM

COVERAGE(2)

User trimming coverage

±63 steps

±4.5

±7.56

DuCy(HSI48)(1) Duty cycle

ACCHSI48_REL

(2)

Accuracy of the HSI48 oscillator over

temperature (factory calibrated)

Reference is 3 V and 30 °C(3).

1.58 V ≤ VDD ≤ 3.6 V,

TJ = –40 to 125 °C

-3

∆VDD(HSI48)(1) HSI48 frequency drift with VDD(4)

3.0 V ≤ VDD ≤ 3.6 V

0.025

0.05

1.58 V ≤ VDD ≤ 3.6 V

0.05

0.1

NT jitter(1)

Next transition jitter

Accumulated jitter on 28 cycles(5)

±0.15

PT jitter(1)

Paired transition jitter

Accumulated jitter on 56 cycles(5)

±0.25

tsu(HSI48)(1)

HSI48 oscillator startup time

2.5

μs

IDD(HSI48)(1)

HSI48 oscillator power consumption

350

400

μA

1. Specified by design. Not tested in production.

2. Evaluated by characterization. Not tested in production.

3. ∆fHSI = ACCHSI48_REL + ∆VDD.

4. These values are obtained with one of the following formula: (Freq(3.6 V) - Freq(3.0 V)) / Freq(3.0 V) or

(Freq(3.6 V) - Freq(1.58 V)) / Freq(1.58 V).

5. Jitter measurements are performed without clock source activated in parallel.

Table 82. HSI48 oscillator characteristics (continued)

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

MSv69123V1

STM32U535NET6QTR Datasheet(PDF) 194 Page - STMicroelectronics

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