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STM32U535NET6QTR Datasheet(PDF) 200 Page - STMicroelectronics

Part # STM32U535NET6QTR
Description  Ultra-low-power Arm® Cortex®-M33 MCUTrustZone®FPU,240 DMIPS, up to 512 KB flash memory, 274 KB SRAM
PDF  278 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STM32U535NET6QTR Datasheet(HTML) 200 Page - STMicroelectronics

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Electrical characteristics
STM32U535xx
200/278
DS14217 Rev 1
Static latch-up
The following complementary static tests are required on three parts to assess the latch-up
performance:
A supply overvoltage is applied to each power supply pin.
A current injection is applied to each input, output and configurable I/O pin.
These tests are compliant with EIA/JESD 78E IC latch-up standard.
5.3.13
I/O current injection characteristics
As a general rule, the current injection to the I/O pins, due to external voltage below VSS or
above VDDIOx (for standard, 3.3 V-capable I/O pins) must be avoided during normal product
operation. However, in order to give an indication of the robustness of the microcontroller if
abnormal injection accidentally happens, some susceptibility tests are performed on a
sample basis during the device characterization.
Functional susceptibility to I/O current injection
While a simple application is executed on the device, the device is stressed by injecting
current into the I/O pins programmed in floating-input mode. While this current is injected
into the I/O pin, one at a time, the device is checked for functional failures.
The failure is indicated by an out-of-range parameter, such as an ADC error above a certain
limit (higher than 5 LSB TUE), out of conventional limits of induced leakage current on
adjacent pins (out of the -5 µA/+0 µA range), or other functional failure (for example reset
occurrence or oscillator frequency deviation).
The characterization results are given in the table below. The negative induced leakage
current is caused by the negative injection. The positive induced leakage current is caused
by the positive injection.
5.3.14
I/O port characteristics
General input/output characteristics
Unless otherwise specified, the parameters given in the table below are derived from tests
performed under the conditions summarized in Table 32. All I/Os are designed as
CMOS- and TTL-compliant.
Table 90. I/O current injection susceptibility(1)(2)
Symbol
Description
Functional susceptibility
Unit
Negative injection
Positive injection
IINJ
Injected current on PA4 and PA5 pins
0
0
mA
Injected current on other PA1, PA6, PA7, PB0,
and PB1 pins
0N/A
Injected current on all other pins
5
N/A
1. Evaluated by characterization. Not tested in production.
2. The I/O structure options listed in this table can be a concatenation of options including the option explicitly listed. For
instance TT_a refers to any TT I/O with _a option. TT_xx refers to any TT I/O and FT_xx refers to any FT I/O.



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