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ISL71841SEHL/PROTO Datasheet(PDF) 25 Page - Renesas Technology Corp |
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ISL71841SEHL/PROTO Datasheet(HTML) 25 Page - Renesas Technology Corp |
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25 / 30 page  ISL71841SEH FN8735 Rev. 7.00 Page 25 of 30 Feb 23, 2018 Die Characteristics Die Dimensions 5000µm x 4080µm (197 mils x 161 mils) Thickness: 483µm ±25µm (19 mils ±1 mil) Interface Materials GLASSIVATION Type: 12kÅ Silicon Nitride on 3kÅ Oxide TOP METALLIZATION Type: 300Å TiN on 2.8µm AlCu In Bondpads, TiN has been removed. BACKSIDE FINISH Silicon PROCESS P6SOI Assembly Related Information SUBSTRATE POTENTIAL Floating Additional Information WORST CASE CURRENT DENSITY 1.6x105 A/cm2 TRANSISTOR COUNT 10752 Weight of Packaged Device 48 Ld CQFP: 1.54 grams (typical) 44 Ld CLCC: 2.02 grams (typical) Lid Characteristics Finish: Gold Potential: Grounded, tied to package GND pin In 48 Ld CQFP: Pin 29 In 44 Ld CLCC: Pin 26 Metalization Mask Layout OUT IN32 IN31 IN30 IN29 IN28 IN27 IN26 IN25 IN24 IN23 IN22 IN21 IN20 IN19 IN18 IN17 IN12 IN11 IN10 IN9 IN8 IN7 IN6 IN5 IN4 IN3 IN2 IN1 IN13 IN14 IN15 IN16 A3 A4 EN BAR GND V‐ V+ VREF A0 A1 A2 |
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