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JS28F320J3F75 Datasheet(PDF) 29 Page - Numonyx B.V |
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JS28F320J3F75 Datasheet(HTML) 29 Page - Numonyx B.V |
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29 / 67 page ![]() Numonyx® Embedded Flash Memory (J3 65 nm) Single Bit per Cell (SBC) Datasheet 28 7.2 Program, Erase, Block-Lock Specifications 7.3 Reset Specifications Note: STS is shown in its default mode (RY/BY#). Table 13: Configuration Performance # Symbol Parameter Typ Max Unit Notes W200 tPROG/W Program Time Single word 40 175 µs 1,2,3,4,6 W250 tPROG Buffer Program Time Aligned 16 Words BP Time (32 Bytes) 128 654 µs 1,2,3,4,5,6 Aligned 128 Words BP Time (256 Bytes) 400 2000 µs 1,2,3,4,5,6 Aligned 256 Words BP Time 720 3600 µs 1,2,3,4,5,6 W501 tERS/AB Block Erase Time 1.0 4.0 sec 1,2,3,4,6 W650 tlks Set Lock-Bit Time 50 60 µs 1,2,3,4,6 W651 tlkc Clear Block Lock-Bits Time 0.5 1 sec 1,2,3,4,6 W600 tSUSP/P Program Suspend Latency Time to Read 15 20 µs 1,2,3,6 W601 tSUSP/E Erase Suspend Latency Time to Read 15 20 µs 1,2,3,6 W602 tERS/SUSP Erase to Suspend 500 — µs 1,7 W652 tSTS STS Pulse Width Low Time 500 — ns 1 W702 tBC/MB blank check Array Block 3.2 — ms — Notes: 1. Typical values measured at TA = +25 °C and nominal voltages. Assumes corresponding lock-bits are not set. Subject to change based on device characterization. 2. These performance numbers are valid for all speed versions. 3. Sampled but not 100% tested. 4. Excludes system-level overhead. 5. These values are valid when the buffer is full, and the start address is aligned. 6. Max values are measured at worst case temperature, data pattern and VCC corner within 100K cycles. But for W650, W651, W600 and W601, the Max value are expressed at +25 °C or -40 °C. 7. W602 is the typical time between an initial block erase or erase resume command and then a subsequent erase suspend command. Violating the specification repeatedly during any particular block erase may cause erase failures. Figure 12: AC Waveform for Reset Operation P3 P1 P2 P1 STS (R) RP# (P) Vcc |
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