JS28F320J3F75 datasheet(37/67 Pages) NUMONYX

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Numonyx® Embedded Flash Memory (J3 65 nm) Single Bit per Cell (SBC)

Datasheet

The Read Array command functions independent of the voltage level on VPEN.

9.2.2

Read Status Register

Issuing the Read Status Register command places the device in Read Status Register

mode. Subsequent reads output Status Register information on DQ[7:0], and 00h on

DQ[15:8]. The device remains in Read Status Register mode until a different read-

mode command is issued. Performing a program, erase, or block-lock operation also

changes the device’s read mode to Read Status Register mode.

The Status Register is updated on the falling edge of OE# or CEx, whichever occurs

last. Status Register contents are valid only when SR.7 = 1. When WSM is active, SR.7

indicates the WSM’s state and SR[6:0] are in high-Z state.

The Read Status Register command functions independent of the voltage level on

VPEN.

9.2.3

Read Device Information

Issuing the Read Device Information command places the device in Read Device

Information mode. Subsequent reads output device information on DQ[15:0].

The device remains in Read Device Information mode until a different read command is

issued. Also, performing a program, erase, or block-lock operation changes the device

to Read Status Register mode.

The Read Device Information command functions independent of the voltage level on

VPEN.

9.2.4

CFI Query

The CFI query table contains an assortment of flash product information such as block

size, density, allowable command sets, electrical specifications, and other product

information. The data contained in this table conforms to the CFI protocol.

Issuing the CFI Query command places the device in CFI Query mode. Subsequent

reads output CFI information on DQ[15:0]. The device remains in CFI Query mode until

a different read command is issued, or a program or erase operation is performed,

which changes the read mode to Read Status Register mode.

The CFI Query command functions independent of the voltage level on VPEN.

9.3

Programming Operations

All programming operations require the addressed block to be unlocked, and a valid

VPEN voltage applied throughout the programming operation. Otherwise, the

programming operation will abort, setting the appropriate Status Register error bit(s).

The following sections describe each programming method.

9.3.1

Single-Word/Byte Programming

Array programming is performed by first issuing the Single-Word/Byte Program

command. This is followed by writing the desired data at the desired array address. The

read mode of the device is automatically changed to Read Status Register mode, which

remains in effect until another read-mode command is issued.

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