BSP030 datasheet(7/14 Pages) NEXPERIA

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Philips Semiconductors

BSP030

N-channel enhancement mode ﬁeld-effect transistor

Product speciﬁcation

Rev. 04 — 26 July 2000

6 of 13

9397 750 07268

Source-drain diode

VSD

source-drain (diode forward)

voltage

IS = 1.25 A; VGS =0V;

Figure 13

−

0.73

1.0

trr

reverse recovery time

IS = 1.25 A;

dIS/dt = −100 A/µs;

VGS =0V; VDS =25V

−

120

−

recovered charge

−

150

−

Table 5:

Characteristics…continued

Tj =25 °C unless otherwise speciﬁed

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Tj =25 °CTj =25 °C and 150 °C; VDS > ID × RDSon

Fig 5.

Output characteristics: drain current as a

function of drain-source voltage; typical values.

Fig 6.

Transfer characteristics: drain current as a

function of gate-source voltage; typical values.

Tj =25 °C

Fig 7.

Drain-source on-state resistance as a function

of drain current; typical values.

Fig 8.

Normalized drain-source on-state resistance

factor as a function of junction temperature.

03ac25

0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2

VDS (V)

(A)

2.8 V

Tj =25

VGS =5V

10 V

3.2 V

2.6 V

3.4 V

03ac27

0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5

VGS (V)

(A)

VDS >ID XRDSon

Tj =25oC

150oC

03ac26

0.02

0.04

0.06

0.08

0.1

0.12

0.14

0.16

0.18

0.2

10 12 14 16 18 20

ID (A)

RDSon

(Ω)

VGS = 10V

Tj =25oC

3.4 V

3.2 V

2.8V 3V

03aa27

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

-60

-20

100

140

180

(

DSon

DSon 25 C

()

----------------------------

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