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BSP030 Datasheet(PDF) 9 Page - Nexperia B.V. All rights reserved

Part # BSP030
Description  N-channel enhancement mode field-effect transistor
PDF  14 Pages
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Manufacturer  NEXPERIA [Nexperia B.V. All rights reserved]
Direct Link  https://www.nexperia.com/
Logo NEXPERIA - Nexperia B.V. All rights reserved

BSP030 Datasheet(HTML) 9 Page - Nexperia B.V. All rights reserved

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Philips Semiconductors
BSP030
N-channel enhancement mode field-effect transistor
Product specification
Rev. 04 — 26 July 2000
8 of 13
9397 750 07268
© Philips Electronics N.V. 2000. All rights reserved.
Tj =25 °C and 150 °C; VGS =0V
ID = 5 A; VDS =15V
Fig 13. Source (diode forward) current as a function of
source-drain (diode forward) voltage; typical
values.
Fig 14. Gate-source voltage as a function of gate
charge; typical values.
03ac29
0
2
4
6
8
10
12
14
16
18
20
0
0.2
0.4
0.6
0.8
1
1.2
VSD (V)
IS
(A)
Tj=25oC
150oC
VGS =0V
03ac31
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
0
5
10
15
20
25
30
35
QG (nC)
VGS
(V)
ID = 5 A
Tj = 25
oC
VDS = 15 V



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