BSP030

N-channel enhancement mode field-effect transistor

Rev. 04 — 26 July 2000

Product specification

c

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1.

Description

N-channel enhancement mode field-effect transistor in a plastic package using

TrenchMOS™1 technology.

Product availability:

BSP030 in SOT223.

2.

Features

s TrenchMOS™ technology

s Fast switching

s Low on-state resistance

s Logic level compatible

s Surface mount package.

3.

Applications

s Motor and actuator driver

s Battery management

s High speed, low resistance switch.

4.

Pinning information

1.

TrenchMOS is a trademark of Royal Philips Electronics.

Table 1:

Pinning - SOT223, simplified outline and symbol

Pin

Description

Simplified outline

Symbol

1

gate (g)

SOT223

N-channel MOSFET

2

drain (d)

3

source (s)

4

drain (d)

12

3

4

03ab45

d

g

s

03ab30