Philips Semiconductors

BSP030

N-channel enhancement mode field-effect transistor

Product specification

Rev. 04 — 26 July 2000

9 of 13

9397 750 07268

© Philips Electronics N.V. 2000. All rights reserved.

9.

Package outline

Fig 15. SOT223.

UNIT

A1

bp

cD

E

e1

HE

Lp

Qy

w

v

REFERENCES

OUTLINE

VERSION

EUROPEAN

PROJECTION

ISSUE DATE

IEC

JEDEC

EIAJ

mm

0.10

0.01

1.8

1.5

0.80

0.60

b1

3.1

2.9

0.32

0.22

6.7

6.3

3.7

3.3

2.3

e

4.6

7.3

6.7

1.1

0.7

0.95

0.85

0.1

0.1

0.2

DIMENSIONS (mm are the original dimensions)

SOT223

SC-73

97-02-28

99-09-13

w M

bp

D

b1

e1

e

A

A1

Lp

Q

detail X

HE

E

v M A

A

B

B

c

y

0

2

4 mm

scale

A

X

13

2

4

Plastic surface mounted package; collector pad for good heat transfer; 4 leads

SOT223