Table 12. Cycling performance by groups of four bytes

Symbol

Parameter

Test condition

Max.

Unit

Ncycle

Write cycle endurance(1)

TA ≤ 25 °C, VCC(min) < VCC < VCC(max)

4 000 000

Write cycles(2)

TA = 85°C, VCC(min) < VCC < VCC(max)

1 200 000

1. The write cycle endurance is defined by characterization and qualification. For devices embedding the ECC functionality, the

write cycle endurance is defined for group of four bytes located at addresses [4*N, 4*N+1, 4*N+2, 4*N+3] where N is an

integer.

2. A write cycle is executed when either a write CDA register, a page write, a byte write , a write identification page or a lock

identification page instruction is decoded. When using the byte write, the page write or the write identification page, refer

also to Section 6.1.3 ECC (error correction code) and write cycling.

Table 13. Memory cell data retention

Parameter

Test condition

Min.

Unit

Data retention (1)

TA = 55 °C

200

Year

1. The data retention behaviour is checked in production, while the data retention limit defined in this table is extracted from

characterization and qualification results.

M24256E-F

DC and AC parameters

DS12687 - Rev 3

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