Full-Bridge PWM Gate Driver

A89505

4

Allegro MicroSystems

955 Perimeter Road

Manchester, NH 03103-3353 U.S.A.

www.allegromicro.com

Characteristics

Symbol

Test Conditions

Min.

Typ.

Max.

Unit

VBB Supply Current

IBB

–

6

10

mA

SLEEPn = low, Standby Mode, VBB ≤ 20 V

–

–

5

µA

SLEEPn = low, Standby Mode

–

–

12

µA

GATE DRIVE

High-Side Gate Drive Output

VGH

Relative to VBB, IGATE = 200 µA, VBB = 8 to 50 V

6.5

6.8

7.5

V

Relative to VBB, IGATE = 200 µA, VBB = 5.5 V

–

5.2

–

V

Low-Side Gate Drive Output

VGL

IGATE = 200 µA, VBB = 8 to 50 V

6.5

6.8

7.5

V

IGATE = 200 µA, VBB = 5.5 V

–

5.4

–

V

Gate Drive Pull-Up Current

IGPU

RISET = 30 kΩ; VGH = VGL = 4 V

21

30

39

mA

Gate Drive Pull-Down Current

IGPD

RISET = 30 kΩ; VGH = VGL = 4 V

47

68

89

mA

Dead-Time

tDT

–

1000

–

ns

Passive Pull-Down Resistance

RGPD

30

50

70

kΩ

LOGIC INPUT AND OUTPUT

Logic Output Voltage

VOCLn

I = 2 mA, overcurrent detected

–

0.2

0.3

V

Logic Output Leakage

IOCLn

V = 5 V, normal operation

–

–

5

µA

PWM Current Limit Flag Timer

tOCLn

300

500

650

µs

Logic Input Voltage

VIH

2.0

–

–

V

VIL

–

–

0.8

V

VIL(SLEEPn)

SLEEPn input

–

–

0.4

V

Logic Input Hysteresis

VHYS

–

320

–

mV

Logic Input Pull-Down Resistor

RPD

30

50

70

kΩ

VREF Input Current

IVREF

VREF = 2.5 V

–5

<1

5

µA

VREF Input Range

VREF

0

–

2.5

V

Current Gain

AV

VREF / VSENSE, VREF = 2.5 V

9.5

–

10.5

V/V

Input Offset, SENSE

VOSSENSE

–10

–

10

mV

Fixed Off-Time

tOFF

RRC = 30 kΩ, CRC = 1 nF

–

30

–

µs

Percent Fast Decay

PFD

Internal PWM chop

–

13

–

%

Blank-Time

tBLK

RRC = 30 kΩ, CRC = 1 nF

2.1

3

3.9

µs

Power-Up Delay

tpu

Time until outputs are enabled

–

50

300

µs

AIOUT Gain

AIOUT

AIOUT / VSENSE, VSENSE = 50 to 200 mV

9

10

11

V/V

Input Offset, AIOUT

VOSAIOUT

–15

–

15

mV

Sample-and-Hold Accuracy

VSH(ACC)

–

15

–

mV

Sample-and-Hold Droop Rate

VDROOP

–

–

1

mV/µs

AIOUT Output Impedance

ROUT(AIOUT)

0.75

1.00

1.45

kΩ

ELECTRICAL CHARACTERISTICS: Valid at TJ = –40°C to 150°C (-K variant), TJ = 25°C (-G variant), VBB = 5.5 to 50 V,

unless otherwise specified

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