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M58LT128HST Datasheet(PDF) 56 Page - STMicroelectronics

Part # M58LT128HST
Description  128-Mbit (8 Mb 횞16, Multiple Bank, Multilevel interface, Burst) 1.8 V supply, Secure Flash memories
PDF  110 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

M58LT128HST Datasheet(HTML) 56 Page - STMicroelectronics

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DC and AC parameters
M58LT128HST, M58LT128HSB
56/110
Table 20.
DC characteristics - currents
Symbol
Parameter
Test Condition
Typ
Max
Unit
ILI
Input leakage current
0V
≤V
IN ≤VDDQ
±1
µA
ILO
Output leakage current
0V
≤V
OUT ≤VDDQ
±1
µA
IDD1
Supply current
Asynchronous Read (f=5 MHz)
E = VIL, G = VIH
14
16
mA
Supply current
Synchronous Read (f = 40 MHz)
4 word
13
17
mA
8 word
15
19
mA
16 word
17
21
mA
Continuous
21
26
mA
Supply current
Synchronous Read (f = 52 MHz)
4 word
16
19
mA
8 word
19
23
mA
16 word
22
26
mA
Continuous
23
28
mA
IDD2
Supply current (Reset)
RP = VSS ± 0.2V
25
75
µA
IDD3
Supply current (Standby)
E = VDDQ ± 0.2V
K=VSS
25
75
µA
IDD4
Supply current (Automatic
Standby)
E = VIL, G = VIH
25
75
µA
IDD5
(1)
1.
Sampled only, not 100% tested.
Supply current (Program)
VPP = VPPH
820
mA
VPP = VDD
10
25
mA
Supply current (Erase)
VPP = VPPH
820
mA
VPP = VDD
10
25
mA
IDD6
(1),(2)
2.
VDD Dual Operation current is the sum of read and program or erase currents.
Supply current
(Dual operations)
Program/Erase in one Bank,
Asynchronous Read in another
Bank
24
41
mA
Program/Erase in one Bank,
Synchronous Read (Continuous
f=52 MHz) in another Bank
33
53
mA
IDD7
(1)
Supply current Program/ Erase
Suspended (Standby)
E = VDDQ ± 0.2V
K=VSS
25
75
µA
IPP1
(1)
VPP supply current (Program)
VPP = VPPH
25
mA
VPP = VDD
0.2
5
µA
VPP supply current (Erase)
VPP = VPPH
25
mA
VPP = VDD
0.2
5
µA
IPP2
VPP supply current (Read)
VPP ≤VDD
0.2
5
µA
IPP3
(1)
VPP supply current (Standby)
VPP ≤VDD
0.2
5
µA



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