M58LT128HST datasheet(51/110 Pages) STMICROELECTRONICS

Part #	M58LT128HST

Description	128-Mbit (8 Mb 횞16, Multiple Bank, Multilevel interface, Burst) 1.8 V supply, Secure Flash memories

PDF	110 Pages

Scroll/Zoom	100%

Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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51 / 110 page

M58LT128HST, M58LT128HSB

Program and erase times and endurance cycles

51/110

Program and erase times and endurance cycles

The Program and Erase times and the number of Program/ Erase cycles per block are

shown in Table 16. Exact erase times may change depending on the memory array

condition. The best case is when all the bits in the block are at ‘0’ (pre-programmed). The

worst case is when all the bits in the block are at ‘1’ (not preprogrammed). Usually, the

system overhead is negligible with respect to the erase time. In the M58LT128HST/B the

maximum number of Program/Erase cycles depends on the VPP voltage supply used.

Table 16.

Program/Erase times and endurance cycles(1) (2)

Parameter

Condition

Min

Typ

Typical after

100kW/E

Cycles

Max

Unit

Erase

Parameter Block (16 Kword)

0.4

2.5

Main Block (64

Kword)

Preprogrammed

1.2

Not Preprogrammed

1.5

Program(3)

Single word

Word Program

180

µs

Buffer Program

180

µs

Buffer (32 words) (Buffer Program)

384

µs

Main Block (64 Kword)

768

Suspend Latency

Program

µs

Erase

µs

Program/Erase Cycles

(per Block)

Main Blocks

100,000

cycles

Parameter Blocks

100,000

cycles

M58LT128HST Datasheet(PDF) 51 Page - STMicroelectronics

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