OPA551, OPA552

SBOS100B – JULY 1999 – REVISED JANUARY 2016

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6 Specifications

6.1 Absolute Maximum Ratings

(1)

over operating free-air temperature range (unless otherwise noted)

MIN

MAX

UNIT

Supply, VS = (V+) to (V–)

60

V

Input voltage range, VIN

(V–) – 0.5

(V+) + 0.5

V

Output

See SOA Curve (Safe Operating Area)

Operating temperature, TA

–55

125

°C

Junction temperature, TJ

150

°C

Storage temperature, Tstg

–65

150

°C

(1)

Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings

only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended

Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

6.2 ESD Ratings

VALUE

UNIT

V(ESD)

Electrostatic discharge

Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1)

±3000

V

(1)

JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

6.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)

MIN

MAX

UNIT

VS

Supply voltage

8 (±4)

60 (±30)

V

Specified temperature

–40

125

°C

6.4 Thermal Information

OPA551, OPA552

D

P

KTW

THERMAL METRIC(1)

UNIT

(SOIC)

(PDIP)

(DDPAK/TO-263)

8 PINS

8 PINS

7 PINS

RθJA

Junction-to-ambient thermal resistance

96.7

44.1

22.7

°C/W

RθJC(top) Junction-to-case (top) thermal resistance

38.7

31.8

34.7

°C/W

RθJB

Junction-to-board thermal resistance

38.2

21.4

7.7

°C/W

ψJT

Junction-to-top characterization parameter

3.7

9.1

3.3

°C/W

ψJB

Junction-to-board characterization parameter

37.5

21.2

7.7

°C/W

RθJC(bot) Junction-to-case (bottom) thermal resistance

—

—

0.6

°C/W

(1)

For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application

report, SPRA953.

4

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