© 2007 Fairchild Semiconductor Corporation

www.fairchildsemi.com

FSQ211 Rev. 1.0.0

5

Electrical Characteristics

TA=25°C unless otherwise specified,

Symbol

Parameter

Conditions

Min.

Typ.

Max.

Unit

SENSEFET SECTION

VDS=650V, VGS=0V

25

IDSS

Zero-Gate-Voltage Drain Current

VDS=520V, VGS=0V,

TC=125°C

200

µA

RDS(ON)

Drain-Source On-State Resistance

(6)

VGS=10V, ID=0.2A

18

25

Ω

gfs

Forward Trans-Conductance

VDS=50V, ID=0.2A

1.0

1.3

S

CISS

Input Capacitance

162

COSS

Output Capacitance

18

CRSS

Reverse Transfer Capacitance

VGS=0V, VDS=25V,

f=1MHz

3.8

pF

CONTROL SECTION

fOSC

Switching Frequency

61

67

73

KHz

ΔfOSC

Switching Frequency Variation

(7)

-25°C ≤ TA ≤ 85°C

±5

±10

%

DMAX

Maximum Duty Cycle

60

67

74

%

VSTART

VFB=GND

8

9

10

V

VSTOP

UVLO Threshold Voltage

VFB=GND

6

7

8

V

IFB

Feedback Source Current

0V ≤ VFB ≤ 3V

0.35

0.40

0.45

mA

tS/S

Internal Soft-Start Time

10

15

20

ms

BURST-MODE SECTION

VBURH

0.6

0.7

0.8

V

VBURL

TJ=25°C

0.45

0.55

0.65

V

VBUR(HYS)

Burst-Mode Voltage

Hysteresis

150

mV

PROTECTION SECTION

ILIM

Peak Current Limit

di/dt= 65mA/µs

0.32

0.38

0.44

A

TSD

Thermal Shutdown Temperature

(8)

125

145

°C

VSD

Shutdown Feedback Voltage

4.0

4.5

5.0

V

IDELAY

Shutdown Delay Current

3V ≤ VFB ≤ VSD

4

5

6

µA

TOTAL DEVICE SECTION

IOP

Operating Supply Current (control part only) VCC ≤ 16V

1.5

3.0

mA

ICH

Start-Up Charging Current

VCC=0V , VSTR=50V

450

550

650

µA

Notes:

6.

Pulse test: Pulse width ≤ 300us, duty ≤ 2%.

7.

These parameters, although guaranteed, are tested in EDS (wafer test) process.

8.

These parameters, although guaranteed, are not 100% tested in production.