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RC21 Datasheet(PDF) 11 Page - NXP Semiconductors |
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RC21 Datasheet(HTML) 11 Page - NXP Semiconductors |
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11 / 11 page ![]() 4.24.2 3 (Ca) damp heat (steady state) (IEC) 56 days; 40 °C; 90 to 95% RH; loaded with 0.01 Pn (IEC steps: 4 to 100 V) R ≤ 1MΩ∆R/R max.: ±1.5% +0.1 Ω ∆R/R max.: ±3% +0.1 Ω R>1M Ω∆R/R max.: ±3% +0.1 Ω not applicable 4.25.1 endurance (at 70 °C) 1000 hours; loaded with Pn or Vmax; 1.5 hours on and 0.5 hours off R ≤ 1MΩ∆R/R max.: ±1.5% +0.1 Ω ∆R/R max.: ±3% +0.1 Ω R>1M Ω∆R/R max.: ±3% +0.1 Ω not applicable 4.23.2 27 (Ba) endurance at upper category temperature 1000 hours; no load R ≤ 1MΩ∆R/R max.: ±1.5% +0.1 Ω ∆R/R max.: ±3% +0.1 Ω R>1M Ω∆R/R max.: ±3% +0.1 Ω not applicable 4.8.4.2 temperature coefficient at 20/LCT/20 °C and 20/UCT/20 °C (TC × 10−6/K) R<5 Ω≤ ±250 not applicable R ≤ 10 MΩ≤ ±200 ≤±200 Other tests in accordance with IEC 115 clauses and IEC 68 test method 4.17 20 (Tb) solderability (after ageing) 8 hours steam or 16 hours 155 °C; unmounted chips completely immersed for 2 ±0.5 s in a solder bath at 235 ±5 °C good tinning ( ≥95% covered); no damage 4.6.1.1 insulation resistance voltage (DC) after 1 minute, metal block method: 100 V for RC01 and RC11, 50 V for RC21 and RC31 Rins min.: 103 MΩ 4.12 noise IEC publication 195 (measured with Quantech - equipment) R ≤ 1kΩ max. 1 µV/V R ≤ 10 kΩ max. 3 µV/V R ≤ 100 kΩ max. 6 µV/V R ≤ 1MΩ max. 10 µV/V Other applicable tests humidity load (steady state) (JIS) 1000 hours; +40 °C; 90 to 95% RH; loaded with Pn or Vmax; 1.5 hours on and 0.5 hours off R ≤ 1MΩ∆R/R max.: ±3% +0.1 Ω R>1M Ω∆R/R max.: ±5% +0.1 Ω not applicable leaching unmounted chips; 60 s; 260 ±5 °C good tinning; no leaching trio damp heat test 1 000 hours; +85 °C; 85% RH; loaded with 0.1 Pn or Vmax R ≤ 1MΩ∆R/R max.: ±3% +0.1 Ω R>1M Ω∆R/R max.: ±5% +0.1 Ω not applicable IEC 115-8 CLAUSE IEC 68-2 TEST METHOD TEST PROCEDURE RESISTANCE RANGE REQUIREMENTS RC01 RC11 RC21 RC31 |
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