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M58BW016DB Datasheet(PDF) 27 Page - STMicroelectronics |
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M58BW016DB Datasheet(HTML) 27 Page - STMicroelectronics |
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27 / 63 page ![]() 27/63 M58BW016BT, M58BW016BB, M58BW016DT, M58BW016DB Table 10. Program, Erase Times and Program Erase Endurance Cycles Note: TA = –40 to 125°C, VDD = 2.7V to 3.6V, VDDQ = 2.4V to VDD Parameters M58BW016B/D Unit Min Typ Max VPP = VDD VPP = 12V VPP = VDD VPP = 12V Parameter Block (64Kb) Program 0.030 0.016 0.060 0.032 s Main Block (512Kb) Program 0.23 0.13 0.46 0.26 s Parameter Block Erase 0.8 0.64 1.8 1.5 s Main Block Erase 1.5 0.9 3 1.8 s Program Suspend Latency Time 3 10 µs Erase Suspend Latency Time 10 30 µs Program/Erase Cycles (per Block) 100,000 cycles |
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