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M58BW016DB Datasheet(PDF) 51 Page - STMicroelectronics |
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M58BW016DB Datasheet(HTML) 51 Page - STMicroelectronics |
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51 / 63 page ![]() 51/63 M58BW016BT, M58BW016BB, M58BW016DT, M58BW016DB Figure 23. Block Erase Flowchart and Pseudo Code Note: 1. If an error is found, the Status Register must be cleared before further P/E operations. Write 20h AI03851 Start Write Block Address & D0h Read Status Register YES NO b7 = 1 YES NO b3 = 0 YES b4 and b5 = 1 VPP Invalid Error (1) Command Sequence Error Erase Command: – write 20h – write Block Address (A11-A18) & D0h (memory enters read status state after the Erase command) do: – read status register (E or G must be toggled) if Erase command given execute suspend erase loop while b7 = 1 If b3 = 1, VPP invalid error: – error handler If b4, b5 = 1, Command Sequence error: – error handler NO NO b5 = 0 Erase Error (1) YES NO Suspend Suspend Loop If b5 = 1, Erase error: – error handler YES End YES NO b1 = 0 Erase to Protected Block Error If b1 = 1, Erase to Protected Block Error: – error handler |
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