M58BW016DB datasheet(32/63 Pages) STMICROELECTRONICS

32 / 63 page

M58BW016BT, M58BW016BB, M58BW016DT, M58BW016DB

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Table 15. DC Characteristics

Symbol

Parameter

Test Condition

Min

Max

Unit

ILI

Input Leakage Current

≤VIN ≤VDDQ

±1

µA

ILO

Output Leakage Current

≤VOUT ≤VDDQ

±5

µA

IDD

Supply Current (Random Read)

E = VIL, G = VIH, fadd = 6MHz

IDDB

Supply Current (Burst Read)

E = VIL, G = VIH, fclock =

56MHz

IDD1

Supply Current (Standby)

E = RP = VDD ± 0.2V

µA

Supply Current (Auto Low-Power)

E = VSS ± 0.2V,

RP = VDD ± 0.2V

µA

IDD2

Supply Current (Reset/Power-down)

RP = VSS ± 0.2V

µA

IDD3

Supply Current (Program or Erase,

Set Lock Bit, Erase Lock Bit)

Program, Block Erase in

progress

IDD4

Supply Current

(Erase/Program Suspend)

E = VIH

µA

IPP

Program Current (Read or Standby)

VPP ≥ VPP1

± 30

µA

IPP1

Program Current (Read or Standby)

VPP ≤VPP1

± 30

µA

IPP2

Program Current (Power-down)

RP = VIL

± 5

µA

IPP3

Program Current (Program)

Program in Progress

VPP = VPP1

200

µA

VPP = VPPH

IPP4

Program Current (Erase)

Erase in Progress

VPP = VPP1

200

µA

VPP = VPPH

VIL

Input Low Voltage

–0.5

0.2VDDQIN

VIH

Input High Voltage (for DQ lines)

0.8VDDQIN

VDDQ +0.3

VIH

Input High Voltage (for Input only

lines)

0.8VDDQIN

3.6

VOL

Output Low Voltage

IOL = 100µA

0.1

VOH

Output High Voltage CMOS

IOH = –100µA

VDDQ –0.1

VPP1

Program Voltage

(Program or Erase operations)

2.7

3.6

VPPH

Program Voltage

(Program or Erase operations)

11.4

12.6

VLKO

VDD Supply Voltage (Erase and

Program lockout)

2.2

VPPLK

VPP Supply Voltage (Erase and

Program lockout)

11.4

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