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AT45DB021E Datasheet(PDF) 40 Page - Renesas Technology Corp |
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AT45DB021E Datasheet(HTML) 40 Page - Renesas Technology Corp |
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40 / 69 page ![]() DS-AT45DB021E-8789 Rev. N Page 40 3/24/26 © 2012-2026 Renesas Electronics AT45DB021E Datasheet 16. Operation Mode Summary The commands described previously can be grouped into four different categories to better describe which commands can be executed at what times. Group A commands consist of: • Main Memory Page Read • Continuous Array Read (SPI) • Read Sector Protection Register • Read Sector Lockdown Register • Read Security Register •Buffer Read Group B commands consist of: • Page Erase • Block Erase • Sector Erase • Chip Erase • Main Memory Page to the Buffer Transfer • Main Memory Page to the Buffer Compare • Buffer to Main Memory Page Program with Built-In Erase • Buffer to Main Memory Page Program without Built-In Erase • Main Memory Page Program through the Buffer with Built-In Erase • Main Memory Byte/Page Program through Buffer without Built-In Erase • Auto Page Rewrite • Read-Modify-Write Group C commands consist of: •Buffer Write • Status Register Read • Manufacturer and Device ID Read • Group D commands consist of: • Erase Sector Protection Register • Program Sector Protection Register • Sector Lockdown • Program Security Register • Buffer and Page Size Configuration • Freeze Sector Lockdown If a Group A command is in progress (not fully completed), then another command in Group A, B, C, or D must not be started. However, during the internally self-timed portion of Group B commands, any command in Group C can be executed. The Group B commands using the Buffer must use Group C commands. Finally, during the internally self-timed portion of a Group D command, only the Status Register Read command is executable. |
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