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AT45DB021E Datasheet(PDF) 48 Page - Renesas Technology Corp |
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AT45DB021E Datasheet(HTML) 48 Page - Renesas Technology Corp |
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48 / 69 page ![]() DS-AT45DB021E-8789 Rev. N Page 48 3/24/26 © 2012-2026 Renesas Electronics AT45DB021E Datasheet 20.4 AC Characteristics 1. Values are based on device characterization, not 100% tested in production. 20.5 Program and Erase Characteristics Symbol Parameter 1.65 V to 3.6 V 2.3 V to 3.6 V Units Min Typ Max Min Typ Max fSCK SCK Frequency 70 70 MHz fCAR1 SCK Frequency for Continuous Read 70 85 MHz fCAR2 SCK Frequency for Continuous Read (Low Frequency) 33 33 MHz fCAR3 SCK Frequency for Continuous Read (Low Power Mode – 01h Opcode) 15 15 MHz tWH SCK High Time 4 4 ns tWL SCK Low Time 4 4 ns tSCKR[1] SCK Rise Time, Peak-to-peak 0.1 0.1 V/ns tSCKF[1] SCK Fall Time, Peak-to-peak 0.1 0.1 V/ns tCS Minimum CS High Time 20 20 ns tCSS CS Setup Time 6 5 ns tCSH CS Hold Time 5 5 ns tSU Data In Setup Time 2 2 ns tH Data In Hold Time 1 1 ns tHO Output Hold Time 0 0 ns tDIS[1] Output Disable Time 8 6 ns tV Output Valid 7 6 ns tWPE WP Low to Protection Enabled 1 1 µs tWPD WP High to Protection Disabled 1 1 µs tLOCK Freeze Sector Lockdown Time (from CS High) 200 200 µs tEUDPD[1] CS High to Ultra-Deep Power-Down 3 3 µs tCSLU Minimum CS Low Time to Exit Ultra-Deep Power- Down 20 20 ns tXUDPD Exit Ultra-Deep Power-Down Time 240 120 µs tEDPD[1] CS High to Deep Power-Down 2 2 µs tRDPD Resume from Deep Power-Down Time 35 35 µs tXFR Page to Buffer Transfer Time 100 100 µs tCOMP Page to Buffer Compare Time 100 100 µs tRST RESET Pulse Width 10 10 µs tREC RESET Recovery Time 1 1 µs tSWRST Software Reset Time 35 35 µs Symbol Parameter Typ Max Typ Max Units tEP Page Erase and Programming Time (256/264 bytes) 10 35 10 25 ms tP Page Programming Time 1.5 3 1.5 3 ms tBP Byte Programming Time 8 8 µs tPE Page Erase Time 6 25 6 25 ms tBE Block Erase Time 25 35 25 35 ms tSE Sector Erase Time 350 550 350 550 ms tCE Chip Erase Time 3 4 3 4 s tOTPP OTP Security Register Program Time 200 500 200 500 µs |
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