AT45DB021E datasheet(6/69 Pages) RENESAS

6 / 69 page

DS-AT45DB021E-8789 Rev. N

Page 6

3/24/26

AT45DB021E Datasheet

Description

The AT45DB021E is a 1.65 V minimum, serial-interface sequential access Flash memory is ideally suited for a

wide variety of digital voice, image, program code, and data storage applications. The AT45DB021E also supports

the RapidS serial interface for applications requiring very high speed operation. Its 2,162,688 bits of memory are

organized as 1,024 pages of 256 bytes or 264 bytes each. In addition to the main memory, AT45DB021E also

contains one SRAM buffer of 256/264 bytes. The Buffer can be used as additional system scratch memory, and

E2PROM emulation (bit or byte alterability) can be easily handled with a self-contained three step read-modify-

write operation.

Unlike conventional Flash memories that are accessed randomly with multiple address lines and a parallel

interface, the AT45DB021E uses a serial interface to sequentially access its data. The simple sequential access

dramatically reduces active pin count, facilitates simplified hardware layout, increases system reliability, minimizes

switching noise, and reduces package size. The device is optimized for use in many commercial and industrial

applications where high-density, low-pin count, low-voltage, and low-power are essential.

To allow for simple in-system re-programmability, AT45DB021E does not require high input voltages for

programming. The device operates from a single 1.65 V to 3.6 V power supply for the erase and program and

read operations. The AT45DB021E is enabled through the Chip Select pin (CS) and accessed through a three-

wire interface consisting of the Serial Input (SI), Serial Output (SO), and the Serial Clock (SCK).

All programming and erase cycles are self-timed.

AT45DB021E Datasheet(PDF) 6 Page - Renesas Technology Corp