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AT80SND1C-ROTIL Datasheet(PDF) 17 Page - ATMEL Corporation |
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AT80SND1C-ROTIL Datasheet(HTML) 17 Page - ATMEL Corporation |
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17 / 210 page  17 AT8xC51SND1C 4109E–8051–06/03 Program/Code Memory The AT8xC51SND1C implement 64K Bytes of on-chip program/code memory. Figure 11 shows the split of internal and external program/code memory spaces depending on the product. The AT83C51SND1C product provides the internal program/code memory in ROM memory while the AT89C51SND1C product provides it in Flash memory. These 2 prod- ucts do not allow external code memory execution. The Flash memory increases EPROM and ROM functionality by in-circuit electrical era- sure and programming. The high voltage needed for programming or erasing Flash cells is generated on-chip using the standard V DD voltage, made possible by the internal charge pump. Thus, the AT89C51SND1C can be programmed using only one voltage and allows In-application software programming. Hardware programming mode is also available using common programming tools. See the application note ‘Programming T89C51x and AT89C51x with Device Programmers’. The AT89C51SND1C implements an additional 4K Bytes of on-chip boot Flash memory provided in Flash memory. This boot memory is delivered programmed with a standard boot loader software allowing In-System Programming (ISP). It also contains some Application Programming Interface routines named API routines allowing In Application Programming (IAP) by using user’s own boot loader. Figure 11. Program/Code Memory Organization ROM Memory Architecture As shown in Figure 11 the AT83C51SND1C ROM memory is composed of one space detailed in the following paragraphs. Figure 12. AT83C51SND1C Memory Architecture 4K Bytes Boot Flash FFFFh F000h 0000h 64K Bytes Code Flash FFFFh AT89C51SND1C 0000h 64K Bytes Code ROM FFFFh AT83C51SND1C F000h FFFFh 64K Bytes ROM Memory 0000h User |
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