Data Sheet

1 of 11

Rev. 04, 2010-04-16

ESD: Electrostatic discharge sensitive device—observe handling precautions!

PTMA080302M

Confidential, Limited Internal Distribution

Broadband Performance

fixture tuned for 920 - 960 MHz

0

5

10

15

20

25

30

35

700

750

800

850

900 950 1000 1050 1100

Frequency (MHz)

-25

-20

-15

-10

-5

0

5

10

Gain

Return Loss

Description

The PTMA080302M is a wideband, matched, 30-watt, 2-stage

LDMOS integrated amplifier intended for use in all typical modulation

formats from 700 to 1000 MHz. This device is offered in a 20-lead,

thermally-enhanced, overmolded package for cool and reliable

operation.

PTMA080302M

Package PG-DSO-20-63

Wideband RF LDMOS Integrated Power Amplifier

30 W, 700 – 1000 MHz

Features

•

Designed for wide RF modulation bandwidths,

and low memory effects

•

On-chip matching, integrated input DC block,

50-ohm input and ~ 8-ohm output

•

Typical GSM/EDGE performance, 940 MHz, 28 V

- Output power = 15 W Avg.

- Linear gain = 31 dB

- Power added efficiency = 36%

- EVM at 15 W = 1.7 %

- ACPR at 400 kHz = –61 dBc

- ACPR at 600 kHz = –73 dBc

•

Typical CW performance at 940 MHz, 28 V

- Output power at P–1dB = 32 W

- Linear gain (1 W) = 31 dB

- Power added efficiency = 46%

•

Capable of handling 10:1 VSWR @ 28 V, 30 W

(CW) output power

•

Integrated ESD protection. Meets HBM Class 1B

(minimum), per JESD22-A114F

•

RoHS-compliant package

*See Infineon distributor for future availability.

RF Characteristics

Characteristic

Symbol

Min

Typ

Max

Unit

Gain

—31

—

dB

Power-added Efficiency

PAE

—

36

—

%

Error Vector Magnitude

EVM (RMS)

—

1.7

—

%