PTMA080302M datasheet(2/11 Pages) INFINEON

2 / 11 page

Data Sheet

2 of 11

Rev. 04, 2010-04-16

PTMA080302M

Confidential, Limited Internal Distribution

RF Characteristics (cont.)

GSM/EDGE Measurements (cont.)

VDD = 28 V, IDQ1 = 120 mA, IDQ2 = 280 mA, ƒ = 920 to 960 MHz, POUT = 15 W Avg.

Characteristic

Symbol

Min

Typ

Max

Unit

Modulation Spectrum

400 kHz offset

ACPR1

—

–61

—

dBc

600 kHz offset

ACPR2

—

–73

—

dBc

Input Return Loss

IRL

—

–15

—

Gain Flatness

ΔG

—

0.2

—

Two-tone Measurements (tested in Infineon test fixture)

VDD = 28 V, IDQ1 = 120 mA, IDQ2 = 280 mA, POUT = 32 W PEP, ƒ = 940 MHz, tone spacing = 1 MHz

Characteristic

Symbol

Min

Typ

Max

Unit

Gain

Gps

—

Power-added Efficiency

PAE

—

Intermodulation Distortion

IMD

—

–33

–31

dBc

Single-tone Measurements (not subject to production test—verified by design/characterization in Infineon test fixture)

VDD = 28 V, IDQ1 = 120 mA, IDQ2 = 280 mA, ƒ = 940 MHz

Characteristic

Symbol

Min

Typ

Max

Unit

Gain

Gps

—32

—

Power-added Efficiency

PAE

—

Output Power

P–1dB

—

DC Characteristics

Characteristic

Conditions

Symbol

Min

Typ

Max

Unit

Drain-Source Breakdown Voltage

VGS = 0 V, IDS = 10 mA

V(BR)DSS

—

Drain Leakage Current

VDS = 28 V, VGS = 0 V

IDSS

—

1.0

µA

VDS = 63 V, VGS = 0 V

IDSS

—

10.0

µA

On-State Resistance

Stage 1

VGS = 10 V, VDS = 0.1 V

RDS(on)

—

0.25

—

Stage 2

VGS = 10 V, VDS = 0.1 V

RDS(on)

—

1.85

—

Operating Gate Voltage

VDS = 28 V,

VGS

2.0

2.5

3.0

IDQ1 = 120 mA, IDQ2 = 280 mA

Gate Leakage Current

VGS = 10 V, VDS = 0 V

IGSS

—

1.0

µA

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