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TLE7233G Datasheet(PDF) 4 Page - Infineon Technologies AG

Part # TLE7233G
Description  SPI Driver for Enhanced Relay Control
PDF  32 Pages
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Manufacturer  INFINEON [Infineon Technologies AG]
Direct Link  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

TLE7233G Datasheet(HTML) 4 Page - Infineon Technologies AG

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SPI Driver for Enhanced Relay Control
SPIDER - TLE7233G
Overview
Datasheet
4
Rev. 1.0, 2008-02-28
Protection Functions
Short circuit
Over load
Over temperature
Electrostatic discharge (ESD)
Application
All types of resistive, inductive and capacitive loads
Especially designed for driving relays in automotive applications
Description
The TLE7233G is a four channel low-side relay switch (1
Ω per channel) in PG-SSOP-24-5 package providing
embedded protective functions. It is especially designed as a relay driver for automotive applications. The 8 bit
serial peripheral interface (SPI) is provided for control and diagnostics of the device and the loads. The SPI
interface provides daisy-chain capability.
The TLE7233G is equipped with four input pins that can be individually routed to the output control of their
corresponding channel and therefore offer complete flexibility in design and PCB layout. The input multiplexer is
controlled via SPI.
A limp home pin (LHI) provides a simple use of the input pins; this enables a direct connection between the input
pins and their corresponding outputs. The limp home function works under
V
DDA in order to ensure functionality
even with a missing digital supply.
The device provides many diagnostics of the load enabling both open load and short circuit detection. The SPI
diagnostic bits indicate any eventual latched fault condition.
Each output stage is protected against short circuit. In case of over load, the affected channel switches off.
Temperature sensors are available for each channel in order to protect the device against over temperature.
The power transistors are made of N-channel vertical power MOSFETs. The inputs CMOS compatible referenced
to Ground. The device is monolithically integrated in Smart Power Technology.



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