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TLE7233G Datasheet(PDF) 10 Page - Infineon Technologies AG |
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TLE7233G Datasheet(HTML) 10 Page - Infineon Technologies AG |
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10 / 32 page ![]() SPI Driver for Enhanced Relay Control SPIDER - TLE7233G General Product Characteristics Datasheet 10 Rev. 1.0, 2008-02-28 Note: Stresses above the ones listed here may cause permanent damage to the device. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Note: Integrated protection functions are designed to prevent IC destruction under fault conditions described in the data sheet. Fault conditions are considered as “outside” normal operating range. Protection functions are not designed for continuous repetitive operation. 4.2 Functional Range Note: Within the functional range the IC operates as described in the circuit description. The electrical characteristics are specified within the conditions given in the related electrical characteristics table. 4.3 Thermal Resistance Note: This thermal data was generated in accordance with JEDEC JESD51 standards. For more information, go to www.jedec.org. 4) ESD susceptibility, HBM according to EIA/JESD 22-A114B Pos. Parameter Symbol Limit Values Unit Conditions Min. Max. 4.2.1 Digital supply voltage V DD 3. 0 5.5 V – 4.2.2 Analog supply voltage V DDA 4.5 5.5 V – 4.2.3 Digital supply current all channels ON IDD(ON) –0.5 mA – 4.2.4 Analog supply current all channels ON IDDA(ON) –5 mA – Pos. Parameter Symbol Limit Values Unit Conditions Min. Typ. Max. 4.3.5 Junction to Soldering Point R thJSP – – 29 K/W pin 2,6, 11, 191) 1) Specified R thJSP value is simulated at natural convection on a cold plate setup (all pins are fixed to ambient temperature). T a = 25 °C. LS0 to LS3 are dissipating 1 W power (0.25 W each). 4.3.6 Junction to Ambient R thJA –47 – K/W 1)2) 2) Specified R thJA value is according to Jedec JESD51-2,-7 at natural convection on FR4 2s2p board; The product (Chip+Package PG-SSOP-24) was simulated on a 76.2 x 114.3 x 1.5 mm board with 2 inner copper layers (2 x 70 µm Cu, 2 x 35 µm Cu). Ta = 25 °C, LS1 to LS3 are dissipating 1 W power (0.25 W each). |
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