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PCF2129A Datasheet(PDF) 52 Page - NXP Semiconductors |
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PCF2129A Datasheet(HTML) 52 Page - NXP Semiconductors |
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52 / 69 page ![]() PCF2129A_2 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 02 — 7 May 2010 52 of 69 NXP Semiconductors PCF2129A Integrated RTC, TCXO and quartz crystal 11. Limiting values [1] Pass level; Human Body Model (HBM) according to Ref. 7 “JESD22-A114”. [2] Pass level; Machine Model (MM), according to Ref. 8 “JESD22-A115”. [3] Pass level; Charged-Device Model (CDM), according to Ref. 9 “JESD22-C101”. [4] Pass level; latch-up testing according to Ref. 10 “JESD78” at maximum ambient temperature (Tamb(max)). [5] According to the NXP store and transport requirements (see Ref. 12 “NX3-00092”) the devices have to be stored at a temperature of +8 °C to +45 °C and a humidity of 25 % to 75 %. For long term storage products deviant conditions are described in that document. Table 51. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDD supply voltage −0.5 +4.5 V IDD supply current −50 +50 mA Vi input voltage −0.5 +6.5 V II input current −10 +10 mA VO output voltage −0.5 +6.5 V IO output current −10 +10 mA at pin SDA/CE −10 +20 mA VBAT battery supply voltage −0.5 +4.5 V Ptot total power dissipation - 300 mW VESD electrostatic discharge voltage HBM [1] - ±3000 V MM [2] - ±250 V CDM [3] - ±1500 V Ilu latch-up current [4] -200 mA Tstg storage temperature [5] −55 +85 °C Toper operating temperature −40 +85 °C |
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