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LH5164ASH Datasheet(PDF) 7 Page - Sharp Corporation |
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LH5164ASH Datasheet(HTML) 7 Page - Sharp Corporation |
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7 / 10 page  DATA VALID tDH tDW WE DIN (NOTE 6) tCW A0 - A12 OE tWC 5164ASH-4 tWR tCW tAW CE1 CE2 tAS tOHZ tWP (NOTE 2) tWR (NOTE 3) DOUT (NOTE 5) (NOTE 1) tWR HIGH-Z 1. The writing occurs during an overlapping period of CE1 = 'LOW,' CE2 = 'HIGH,' and WE = 'LOW' (tWP). 2. tCW is defined as the time from the last occuring transition, either CE1 LOW transition or CE2 HIGH transition, to the time when the writing is finished. 3. tAS is defined as the time from address change to writing start. 4. tWR is defined as the time from writing finish to address change. 5. If CE1 LOW transition or CE2 HIGH transition occurs at the same time or after WE LOW transition, the output will remain high-impedance. 6. While I/O pins are in the output state, input signals with the opposite logic level must not be applied. NOTES: (NOTE 4) Figure 6. Write Cycle 1 (OE Controlled) CMOS 64K (8K × 8) Static RAM LH5164ASH 7 |
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